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| TSM4410D Dual N-Channel Enhancement Mode MOSFET Pin assignment: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 Vds = 25V 8. Drain 1 7. Drain 1 6. Drain 2 5. Drain 2 Id = 10A Rds(on), Vgs @ 10V, Ids @ 10A = 21m Rds(on), Vgs @ 4.5V, Ids @ 8A = 15m Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Fully characterized avalanche voltage and current Block Diagram Ordering Information Part No. TSM4410DCS RL Packing Tape & Reel 2,500/per reel Package SOP-8 Absolute Maximum Rating (TA = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range TA = 25 oC TA = 70 C o Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit 25 20 10 50 2.5 1.6 +150 -55 to +150 Unit V V A W o o C C Thermal Performance Parameter Junction-to-Foot Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: 1. Maximum DC current limited by the package 2. 1-in2 2oz Cu PCB board Symbol RjF Rja Limit 22 50 Unit o C/W TSM4410D 1-1 2006/04 rev. A Electrical Characteristics (single channel) TJ = 25 oC, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Conditions Symbol Min Typ Max Unit VGS = 0V, ID = 250uA VGS = 4.5V, ID = 8A VGS = 10V, ID = 10A VDS = VGS, ID = 250uA VDS = 25V, VGS = 0V VGS = 20V, VDS = 0V VDS =10V, ID = 10A BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS gfs 25 --1.0 ---- -13 18 ---15 -15 21 3.0 1.0 100 -- V m m V uA nA S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz VDD = 15V, RL = 15, ID = 1A, VGEN = 10V, RG = 6 VDS = 15V, ID = 10A, VGS = 10V Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss ----------15 2.5 3 20 6 49 16 921 208 108 26 ---------pF nS nC Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 3A, VGS = 0V Note: 1. pulse test: pulse width <=300uS, duty cycle <=2% 2. Negligible, Dominated by circuit inductance. IS VSD ---0.87 3 1.5 A V TSM4410D 2-2 2006/04 rev. A Typical Characteristics Curve (single channel) (Ta = 25 oC unless otherwise noted)) TSM4410D 3-3 2006/04 rev. A Electrical Characteristics Curve (continued) TSM4410D 4-4 2006/04 rev. A SOP-8 Mechanical Drawing A DIM SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27 (typ) 0.05 (typ) 0.10 0.25 0.004 0.009 0o 7o 0o 7o 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 16 9 B P 1 8 G C D K M R F A B C D F G K M P R TSM4410D 5-5 2006/04 rev. A |
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